A Model of Amorphous Silicon Layer Regrowth
نویسندگان
چکیده
منابع مشابه
Regrowth of amorphous films
In this review, we emphasize three aspects of the regrowth of ion-implanted amorphous Si layers: (l) orientation dependence of the regrowth kinetics, (2) impurity effects on the regrowth kinetics, and (3) impurity distribution due to regrowth. To account for the orientation dependence there are at least three proposed models: (1) geometric model, (2) stress relaxant model, and (3) surface recon...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 1985
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-45-47